Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:50mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4.5 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:6-MLP (3x3)
• Package / Case:6-VDFN Exposed Pad