Technical Details

• Series:*
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 20V
• Vgs(th) (Max) @ Id:5.8V @ 20mA

• Gate Charge (Qg) (Max) @ Vgs:67 nC @ 20 V
• Vgs (Max):±25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 800 V
• FET Feature:Standard
• Power Dissipation (Max):272W (Tc)
• Operating Temperature:-55°C ~ 175°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-3P(N)
• Package / Case:TO-3P-3, SC-65-3