Technical Details

• Series:U-MOSIX-H
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:3.8mOhm @ 30A, 4.5V
• Vgs(th) (Max) @ Id:2.4V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:63.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4670 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):87W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220
• Package / Case:TO-220-3