Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):102W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220-3
• Package / Case:TO-220-3