- Part NumberSISH536DN-T1-GE3
- BrandVishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL 30 V (D-S) MOSFET POWE
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 3,289
Can ship immediately
Pricing:
- 1$0.66
Technical Details
- Series:TrenchFET® Gen V
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:24.7A (Ta), 67.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:3.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
- Vgs (Max):+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):3.57W (Ta), 26.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8SH
- Package / Case:PowerPAK® 1212-8SH
Related Products
Added to cart!
This item has been added to your cart.