Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:111mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1.03 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 35W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TP
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA