Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):18V
• Rds On (Max) @ Id, Vgs:25mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
• Vgs (Max):+22V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):390W (Tc)
• Operating Temperature:-55°C ~ 200°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:HiP247™
• Package / Case:TO-247-3