Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:500mOhm @ 500mA, 4V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 4 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:115 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):600mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-SCH
• Package / Case:6-SMD, Flat Leads