Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:125mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
• Vgs (Max):+30V, -20V
• Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):227.2W (Ta)
• Operating Temperature:150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-3PSG
• Package / Case:TO-3P-3, SC-65-3