Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
• Rds On (Max) @ Id, Vgs:37mOhm @ 4.6A, 4.5V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:265pF @ 10V
• Power - Max:510mW (Ta), 8.33W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-UDFN Exposed Pad
• Supplier Device Package:6-HUSON-EP (2x2)