Technical Details

• Series:Automotive, AEC-Q101
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):250mW (Ta), 770mW (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-75
• Package / Case:SC-75, SOT-416