Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
• Vgs(th) (Max) @ Id:1.25V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
• FET Feature:-
• Power Dissipation (Max):400mW (Ta)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3
• Package / Case:TO-236-3, SC-59, SOT-23-3