Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:7.5mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:32.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1.714 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.7W (Ta), 112W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN