Technical Details

• Series:Automotive, AEC-Q101
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:224mOhm @ 12A, 20V
• Vgs(th) (Max) @ Id:4.3V @ 2.5mA

• Gate Charge (Qg) (Max) @ Vgs:34 nC @ 20 V
• Vgs (Max):+25V, -15V
• Input Capacitance (Ciss) (Max) @ Vds:665 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):119W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3 Variant