Technical Details

• Series:Automotive, AEC-Q101
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):900 V
• Current - Continuous Drain (Id) @ 25°C:46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:84mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id:4.3V @ 5mA

• Gate Charge (Qg) (Max) @ Vgs:87 nC @ 15 V
• Vgs (Max):+19V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 450 V
• FET Feature:-
• Power Dissipation (Max):221W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3 Variant