Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:17A (Ta), 171A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:40.2 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5.66 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):950mW (Ta), 96.2W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN, 5 Leads