Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):500 mA
• Voltage - Collector Emitter Breakdown (Max):200 V
• Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
• Power - Max:750 mW
• Frequency - Transition:80MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:14-DIP (0.300", 7.62mm)
• Supplier Device Package:14-PDIP