Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):6 A
• Voltage - Collector Emitter Breakdown (Max):12 V
• Vce Saturation (Max) @ Ib, Ic:120mV @ 400mA, 4A
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
• Power - Max:830 mW
• Frequency - Transition:140MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:ChipFET™