Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:4mOhm @ 45A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:6.9 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1.2W (Ta), 105W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63