Technical Details

• Series:-
• Package:Strip
• Part Status:Obsolete
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):12V
• Frequency - Transition:7GHz
• Noise Figure (dB Typ @ f):1.1dB @ 1GHz
• Gain:11.5dB

• Power - Max:200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
• Current - Collector (Ic) (Max):100mA
• Operating Temperature:150°C (TJ)
• Mounting Type:-
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:-