Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:350mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:4 nC @ 5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SuperSOT-3
• Package / Case:TO-236-3, SC-59, SOT-23-3