Technical Details

• Series:-
• Package:-
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:79 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3
• Package / Case:TO-236-3, SC-59, SOT-23-3