Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):700 V
• Current - Continuous Drain (Id) @ 25°C:124A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:19mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id:2.4V @ 4mA

• Gate Charge (Qg) (Max) @ Vgs:215 nC @ 20 V
• Vgs (Max):+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:4500 pF/m @ 700 V
• FET Feature:-
• Power Dissipation (Max):365W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SOT-227 (ISOTOP®)
• Package / Case:SOT-227-4, miniBLOC