In Stock: 26

Can ship immediately

Pricing:
  • 1$11.17

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id:2.8V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:64 nC @ 20 V
  • Vgs (Max):+23V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:838 pF @ 1000 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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