Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:52mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id:2.8V @ 10mA

• Gate Charge (Qg) (Max) @ Vgs:115 nC @ 20 V
• Vgs (Max):+20V, -5V
• Input Capacitance (Ciss) (Max) @ Vds:1895 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SOT-227B
• Package / Case:SOT-227-4, miniBLOC