Technical Details

• Series:StrongIRFET™
• Package:Tube
• Part Status:Last Time Buy
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 150µA

• Gate Charge (Qg) (Max) @ Vgs:137 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8320 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):231W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB