Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
• Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):88W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:I-PAK (LF701)
• Package / Case:TO-252-4, DPak (3 Leads + Tab)