Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:500mOhm @ 3.1A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 25W (Tc)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:D-Pak
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63