Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:-
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:6.4A (Ta), 9.7A (Ta)
• Rds On (Max) @ Id, Vgs:22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V

• Vgs(th) (Max) @ Id:2.25V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs:6.9nC, 9.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:580pF, 900pF @ 15V
• Power - Max:1.4W (Ta), 2W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO