- Part NumberIPD60N10S412ATMA1
- BrandRochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 60A TO252-3-313
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 9,795
Can ship immediately
Pricing:
- 1$0.55
- 2,500$0.51713
Technical Details
- Series:Automotive, AEC-Q101, OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:12.2mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.47 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3-313
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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