Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss):35V
• Current - Continuous Drain (Id) @ 25°C:4.5A
• Rds On (Max) @ Id, Vgs:64mOhm @ 4.5A, 10V

• Vgs(th) (Max) @ Id:-
• Gate Charge (Qg) (Max) @ Vgs:5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:280pF @ 10V
• Power - Max:2.2W
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC