Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8 V, 4V
• Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id:1.1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):540mW (Ta)
• Operating Temperature:125°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:WSSMini6-F1
• Package / Case:6-SMD, Flat Leads