Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):2 A
• Voltage - Collector Emitter Breakdown (Max):35 V
• Vce Saturation (Max) @ Ib, Ic:450mV @ 50mA, 2A
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1.5A, 1.5V
• Power - Max:1.56 W
• Frequency - Transition:-
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-VDFN Exposed Pad
• Supplier Device Package:6-MicroFET (2x2)