Technical Details

• Series:PowerTrench®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:9mOhm @ 12.5A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
• Vgs (Max):+30V, -20V
• Input Capacitance (Ciss) (Max) @ Vds:2.659 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)