- Part NumberEPC2100
- BrandEPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGAN TRANS ASYMMETRICAL HALF BRID
- CategoryTransistors - FETs, MOSFETs - Arrays
In Stock: 500
Can ship immediately
Pricing:
- 1$6.94
- 500$4.88808
- 1,000$4.41504
Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs:8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
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