Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Rds On (Max) @ Id, Vgs:14.8mOhm @ 4A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:48.3 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:2712 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):730mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:U-DFN2020-6 (Type F)
• Package / Case:6-UDFN Exposed Pad