Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
• Rds On (Max) @ Id, Vgs:60mOhm @ 500mA, 8V
• Vgs(th) (Max) @ Id:1.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:1.677 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:192 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):790mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:X4-DSN1006-3
• Package / Case:3-XFDFN