Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 5V
• Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.764 nC @ 4.5 V
• Vgs (Max):12V
• Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):900mW (Ta)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TLM621
• Package / Case:6-PowerVFDFN