- Part NumberCSD23202W10T
- BrandTexas Instruments
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 2.2A 4DSBGA
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 18,785
Can ship immediately
Pricing:
- 1$0.48
- 250$0.29313
- 500$0.24887
- 750$0.2157
- 1,250$0.19357
Technical Details
- Series:NexFET™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:53mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
- Vgs (Max):-6V
- Input Capacitance (Ciss) (Max) @ Vds:512 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-DSBGA (1x1)
- Package / Case:4-UFBGA, DSBGA
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