Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V, 20V
• Current - Continuous Drain (Id) @ 25°C:400mA, 1.5A
• Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V

• Vgs(th) (Max) @ Id:-
• Gate Charge (Qg) (Max) @ Vgs:1.58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:7pF @ 10V
• Power - Max:800mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-CPH