Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:34mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):1.6W (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:6-CPH
• Package / Case:SOT-23-6 Thin, TSOT-23-6