Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:N-Channel
• Voltage - Breakdown (V(BR)GSS):40 V
• Drain to Source Voltage (Vdss):-
• Current - Drain (Idss) @ Vds (Vgs=0):-
• Current Drain (Id) - Max:5 mA

• Voltage - Cutoff (VGS off) @ Id:-
• Input Capacitance (Ciss) (Max) @ Vds:14pF @ 20V
• Resistance - RDS(On):100 Ohms
• Power - Max:-
• Operating Temperature:-65°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die