Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:1.1Ohm @ 430mA, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.88 nC @ 4.5 V
• Vgs (Max):8V
• Input Capacitance (Ciss) (Max) @ Vds:55 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):100mW (Ta)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-883
• Package / Case:SC-101, SOT-883