Technical Details

• Series:Automotive, AEC-Q101, TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):75 V
• Current - Continuous Drain (Id) @ 25°C:57A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:15mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:2.8V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:61.8 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):128W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63