Technical Details

• Series:TEMPFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):49 V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
• Vgs(th) (Max) @ Id:2V @ 240µA

• Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4.8 pF @ 25 V
• FET Feature:Temperature Sensing Diode
• Power Dissipation (Max):300W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-7-12
• Package / Case:TO-220-7