Technical Details

• Series:TEMPFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):55 V
• Current - Continuous Drain (Id) @ 25°C:35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:13mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id:2V @ 130µA

• Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2660 pF @ 25 V
• FET Feature:Temperature Sensing Diode
• Power Dissipation (Max):170W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:P-TO220-5-43
• Package / Case:TO-220-5