Technical Details

• Series:SIPMOS®
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:430mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4Ohm @ 430mA, 10V
• Vgs(th) (Max) @ Id:2V @ 370µA

• Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT223-4
• Package / Case:TO-261-4, TO-261AA