Technical Details

• Series:SIPMOS®
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):200 V
• Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
• Vgs(th) (Max) @ Id:1.8V @ 400µA

• Gate Charge (Qg) (Max) @ Vgs:16.1 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:357 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT223-4
• Package / Case:TO-261-4, TO-261AA