Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:12.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:8mOhm @ 14.9A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5.89 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-DSO-8
• Package / Case:8-SOIC (0.154", 3.90mm Width)