Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:300A (Tc)
• Rds On (Max) @ Id, Vgs:-

• Vgs(th) (Max) @ Id:4V @ 68mA
• Gate Charge (Qg) (Max) @ Vgs:-
• Input Capacitance (Ciss) (Max) @ Vds:35000pF @ 10V
• Power - Max:1875W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module